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Transistors
2SD1994A
Silicon NPN epitaxial planer type
Unit: mm
For low-frequency power amplification and driver amplification Complementary to 2SB1322A I Features
* Low collector to emitter saturation voltage VCE(sat) * Output of 2 W to 3 W is obtained with a complementary pair with 2SB1322A * Allowing supply with the radial taping
6.90.1
1.05 2.50.1 0.05
(1.45) 0.8
0.15
0.7
4.0
0.65 max.
1.0 1.0
0.2
0.45-0.05
+0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Rating 60 50 5 1.5 1 1 150 -55 to +150
Unit V V V A A W C C
1.20.1 0.65 max. 0.45+ 0.1 - 0.05
Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
1: Emitter 2: Collector 3: Base MT2 Type Package
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion
2.50.1
I Absolute Maximum Ratings Ta = 25C
1
2
3
0.45-0.05
+0.1
2.50.5
2.50.5
(HW Type)
I Electrical Characteristics Ta = 25C 3C
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Collector to emitter saturation voltage *1 Base to emitter saturation voltage *1 Transition frequency
*1
Symbol ICBO VCBO VCEO VEBO hFE1 *2 hFE2 VCE(sat) VBE(sat) fT Cob
Conditions VCB = 20 V, IE = 0 IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCE = 10 V, IC = 500 mA VCE = 5 V, IC = 1 A IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
Min
Typ
Max 0.1
14.50.5
0.5 4.50.1
Unit A V V V
60 50 5 85 50 100 0.2 0.85 200 11 20 0.4 1.2 340
V V MHz pF
Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Q 85 to 170
R 120 to 240
S 170 to 340
No-rank 85 to 340
Product of no-rank is not classified and have no indication for rank.
1
2SD1994A
PC Ta
1.2
Transistors
IC VCE
1.50 Ta = 25C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 0.50 3 mA 2 mA 0.25 1 mA
1.2 VCE = 10 V Ta = 25C 1.0
IC IB
Collector power dissipation PC (W)
1.0
Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
1.25
Collector current IC (A)
0.8
1.00
Collector current IC (A)
0.8
0.6
0.75
0.6
0.4
0.4
0.2
0.2
0
0
0 20 40 60 80 100 120 140 160
0
2
4
6
8
10
0
0
2
4
6
8
10
12
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
10 3 1 0.3 0.1 0.03 0.01
VBE(sat) IC
100
hFE IC
500 VCE = 10 V
Base to emitter saturation voltage VBE(sat) (V)
IC / IB = 10
IC / IB = 10
30
Forward current transfer ratio hFE
400
10
3 1
25C Ta = 100C -25C
25C Ta = -25C 100C
300 Ta = 100C 200 25C -25C 100
0.3 0.1 0.03 0.01 0.01 0.03
0.003 0.001 0.01 0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
0 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT IE
200 180 VCB = 10 V Ta = 25C 60
Cob VCB
Collector output capacitance Cob (pF)
Collector to emitter voltage VCER (V)
IE = 0 f = 1 MHz Ta = 25C
120
VCER RBE
IC = 10 mA Ta = 25C 100
Transition frequency fT (MHz)
160 140 120 100 80 60 40 20 0 -1 -2 -3 -5 -10 -20-30 -50 -100
50
40
80
30
60
20
40
10
20
0
1
3
10
30
100
0 0.1
0.3
1
3
10
30
100
Emitter current IE (mA)
Collector to base voltage VCB (V)
Base to emitter resistance RBE (k)
2
Transistors
ICEO Ta
104 VCE = 10 V
2SD1994A
Area of safe operation (ASO)
10 3 ICP t = 10 ms t=1s Single pulse Ta = 25C
Collector current IC (A)
103
1 0.3 0.1 0.03 0.01
IC
ICEO (Ta) ICEO (Ta = 25C)
102
10
0.003
1
0
20
40
60
80 100 120 140 160
0.001 0.1
0.3
1
3
10
30
100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
3
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2001 MAR

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